technical data power mosfet p channel devices IRF9150 25 ampere 100 volts 0.15 w repetitive avalanche ratings low r ds(on) low drive requirement dynamic dv/dt rating absolute maximum ratings (t c = 25 0 c unless otherwise no ted) parameters / test conditions symbol value units drain - source voltage v ds - 100 v gate - source voltage v gs 20 v continuous drain current t c = 25 0 c i d - 25 a pulsed drain current (1) i dm - 100 a power dissipation t c = 25 0 c p d 150 w operating jun ction & storage temperature range t j, t stg - 55 to +150 0 c lead temperature (1/16" from case for 10 secs.) t l 300 0 c thermal resistance ratings thermal resistance symbol typ. max. units junction - to - case r thjc 0.83 0 c /w junction - to - ambient r thja 30 0 c /w case - to - sink r thcs 0.1 0 c /w (1)pulse width limited by maximum junction temperature 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 51303 page 1 of 2
power mosfet p channel IRF9150 electrical characteristics (t j = 25 0 c un less otherwise noted) parameters / test conditions symbol min. typ. max. units drain - source breakdown voltage v gs = 0 v, i d = - 250 m a v (br)dss - 100 v gate threshold voltage v ds = 0 v gs, i d = 250 m a v gs(th) v gate - body leakage v gs = at rated v gs i gss 100 na zero gate voltage drain current v ds = max rating , v gs = 0 v i dss - 250 m a zero gat e voltage drain current v ds = 80% max v (br)dss, v gs = 0 v, t j = 125 0 c i dss - 1000 m a drain - source on - state resistance (2) v gs = 10 v, i d = 10 a r ds(on) 0.15 w forward transconductance (2) v ds = 10 v, i d = 12.5 a g fs 4 s( w ) input capacitance output capacitance reverse transfer capacitance v gs = 0 v v ds = - 25 v f = 1.0 mhz c iss c oss c rss 2400 850 400 pf total gate charge gate - source charge gate - drain charge v ds = v (br)dss * 0.8 v g s = 10 v, i d = .25 a (gate charge is essentially independent of operating temperature.) q g q gs q gd 14 42 120 nc turn - on delay time rise time turn - off delay time fall time v dd = - 50 v, i d = - 25 a, r g = 6.8 w ( switching time is essentially independent of operating temperature.) t d(on) t r t d(off) t f 24 160 100 70 ns source - drain diode ratings & characteristics (t j = 25 0 c unless otherwise noted) parameters / test conditions symbol min. typ. max units continuous current i s - 25 a pulsed current (1) i sm - 100 a forward voltage (2) i f = i s , v gs = 0 v v sd 1.5 v reverse recovery time i f = i s , di/dt = 100 a/ m s t rr 300 ns reverse recovered charge i f = i s , di/dt = 100 a/ m s q rr 0.3 1.5 m c (1)pulsed width limited by maximum junction temperature. (2)pulse test: pulse width < 300 m sec. duty cycle 2%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 51303 page 2 of 2
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